elektronische bauelemente SSF319W 50v, 200ma, r ds(on) 3.5 n-ch enhancement mode power mosfet 26-feb-2016 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. j2 sot-323 rohs compliant product a suffix of -c specifies halogen & lead-free description typical applications are dc/dc converters, power management in portable and batteryCpowered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features lower threshold voltage esd protection: 1500v marking package information package mpq leader size sot-323 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 50 v continuous gate-source voltage v gs 20 v continuous drain current t a =25c i d 200 ma pulsed drain current@ tp Q 10s i dm 800 ma t a =25c 150 mw total power dissipation 1 derate above 25c p d 1.2 mw / c thermal resistance from junction to ambient 1 r ja 833 c / w maximum lead temperature for soldering purposes@ for 10 seconds t l 260 c operating junction and storage temperature range t j , t stg 150, -55~150 c top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 1.80 3.00 g 0.1 ref. b 1.80 2.55 h 0.525 ref. c 1.1 1.4 j 0.05 0.25 d 0.80 1.15 k 0.8 typ. e 1.20 2.00 l 0.65 typ. f 0.15 0.50
elektronische bauelemente SSF319W 50v, 200ma, r ds(on) 3.5 n-ch enhancement mode power mosfet 26-feb-2016 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition off characteristics drain-source breakdown voltage bv dss 50 - - v v gs =0, i d =250 a - - 0.1 v ds =25v, v gs =0 drain-source leakage current i dss - - 0.5 a v ds =50v, v gs =0 forward gate-body leakage current i gssf - - 10 a v gs =20v reverse gate-body leakage current i gssr - - -10 a v gs = -20v on characteristics 2 gate-threshold voltage v gs(th) 0.5 - 1.5 v v ds =v gs , i d =1ma - 5.6 10 v gs =2.75v, i d <200ma, t a = -40c ~85c static drain-source on-resistance r ds(on) - - 3.5 v gs =5v, i d =200ma forward transconductance g fs 100 - - ms v ds =25v, i d =200ma, f=1khz switch characteristics turn-on delay time t d(on) - 3.8 - turn-off delay time t d(off) - 19 - ns v dd =30v v gen =10v r g =25 r l =60 i d =500ma dynamic characteristics input capacitance c iss - 22.8 - output capacitance c oss - 3.5 - reverse transfer capacitance c rss - 2.9 - pf v gs =0 v ds =25v f=1mhz notes: 1. on a 10.750.062 inch fr4-board. 2. pulse test: pulse width Q 300 s, duty cycle Q 2%.
elektronische bauelemente SSF319W 50v, 200ma, r ds(on) 3.5 n-ch enhancement mode power mosfet 26-feb-2016 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSF319W 50v, 200ma, r ds(on) 3.5 n-ch enhancement mode power mosfet 26-feb-2016 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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